| 退火对硫化后的P+ 型InP表面性能的影响 |
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| 引用本文： | 庄春泉 汤英文 龚海梅. 退火对硫化后的P+ 型InP表面性能的影响[J]. 激光与红外, 2005, 35(11): 894-896 |
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| 作者姓名： | 庄春泉 汤英文 龚海梅 |
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| 作者单位： | 中科院上海技术物理研究所红外传感技术国家重点实验室,上海,200083 |
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| 摘 要： | 文章采用光致发光（PL）测试和X射线光电能谱（XPS）测试相结合的方法,对硫化前后P＋型InP的PL光谱以及表面化学成分进行了分析,得到了退火对硫化过的InP表面性能的影响结果;同时得到了S在InP表面所成键的结构以及稳定性随温度的变化的情况.
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| 关 键 词： | 光致发光 X射线光电子能谱 硫化 |
| 文章编号： | 1001-5078（2005）11-0894-03 |
| 收稿时间： | 2005-08-26 |
| 修稿时间： | 2005-08-26 |
The Influence of Thermal Annealing on the Performance of(NH4)2 S Passivated InP Surface |
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| ZHUANG Chun-quan,TANG Ying-wen,GONG Hai-mei. The Influence of Thermal Annealing on the Performance of(NH4)2 S Passivated InP Surface[J]. Laser & Infrared, 2005, 35(11): 894-896 |
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| Authors: | ZHUANG Chun-quan TANG Ying-wen GONG Hai-mei |
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| Affiliation: | State Key Laboratories of Transducer Technology, Shanghai Institute of Techical Physics, Shanghai 200083, China |
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| Abstract: | (NH_4)_2S was used to passivate P~ -type InP,and thermal annealing at different temperature was followed.In order to appraise the effects of the surface electronic properties,Photoluminescence was used to achieve the photoluminescence(PL) intensity of sulfided samples thermally annealed at different temperature.In order to understand the sulfur passivation mechanism,X-ray photoelectron spectroscopy(XPS) was used to investigate chemical binding states of the samples. |
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| Keywords: | photoluminescence X-ray photoelectron spectroscopy sulfidation |
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