| MMVCX光伏型HgCdTe中波探测器暗电流温度特性 |
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| 引用本文： | 王鹏,何家乐,许娇,吴明在,叶振华,丁瑞军,何力.MMVCX光伏型HgCdTe中波探测器暗电流温度特性[J].红外与毫米波学报,2017,36(3):289-294. |
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| 作者姓名： | 王鹏 何家乐 许娇 吴明在 叶振华 丁瑞军 何力 |
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| 作者单位： | 安徽大学 物理与材料科学学院,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,安徽大学 物理与材料科学学院,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 摘 要： | 研究了光伏型HgCdTe中波探测器的暗电流与烘烤时间的关系特性.编写了一种适用于n-on-p型的中波HgCdTe红外探测器的解析拟合程序.结合暗电流的主导机制有扩散机制、产生复合机制、带间直接隧穿机制和陷阱辅助隧穿机制.通过对样品不同烘烤时间的R-V曲线的解析拟合,得到了它们的暗电流成分,提取了6个特征参数.通过对比不同烘烤时间特征参数的变化,分析了烘烤对器件的影响.
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| 关 键 词： | HgCdTe 光伏探测器 暗电流 非线性同时拟合模型 烘烤 |
| 收稿时间： | 2016/11/27 0:00:00 |
| 修稿时间： | 2016/12/19 0:00:00 |
Parameters extraction from the dark current characteristics of mid-wavelength HgCdTe photodiode after annealing |
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| WANG Peng,HE Jia-Le,XU Jiao,WU Ming-Zai,YE Zhen-Hu,DING Rui-Jun and HE Li.Parameters extraction from the dark current characteristics of mid-wavelength HgCdTe photodiode after annealing[J].Journal of Infrared and Millimeter Waves,2017,36(3):289-294. |
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| Authors: | WANG Peng HE Jia-Le XU Jiao WU Ming-Zai YE Zhen-Hu DING Rui-Jun and HE Li |
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| Affiliation: | Anhui University, School of Physics & Materials Science,SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES,SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES,Anhui University, School of Physics & Materials Science,SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES,SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES,SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES |
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| Abstract: | In this paper, we studied the relationship between dark current and baking time of mid-wavelength HgCdTe infrared photovoltaic detector. A simultaneous-mode nonlinear fitting program for n-on-p mid-wavelength HgCdTe infrared detector is reported. The curve-fitting model includes the diffusion, generation-recombination, band-to-band tunneling and trap-assisted tunneling current as dark current mechanisms. The dark current components and six characteristic parameters were obtained from the fitting of resistance-voltage(R-V) curves measured before and at different annealing time. The effects of annealing on the performance of the photodiodes were analyzed by comparing the characteristic parameters of devices at different annealing time. |
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| Keywords: | HgCdTe photodiode dark current simultaneous-mode nonlinear fitting program annealing |
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