Sb掺杂SnO_2表面富集光电子能谱研究

采用化学共沉淀法,以SnCl4.5H2O和SbCl3为原料,成功地制备了5～20 nm左右、四方金红石Sb掺杂SnO2（ATO）微晶粉体。电阻率,XRD、XPS综合测试分析表明：Sb掺杂量、煅烧温度对Sb在SnO2晶粒中的分布、Sb价态的存在形式、电阻率的变化有较大的影响。掺杂到SnO2粉体中的Sb含量,不会改变SnO2的四方金红石结构,一部分Sb原子固溶到SnO2晶格中,剩余的Sb原子向SnO2粉体表面富集,并取代SnO2表面的Sn原子,形成Sb富集层,相当于一层＂栅栏＂,阻碍心部Sb原子向表面扩散,抑止掺杂SnO2（ATO）晶粒的长大。

XPS Investigations of Surface Segregation of Sb-doped SnO_2 Powder

The quartet rutile Sb-doped SnO2（ATO） microcrystalline powder with a particle diameter of about 5~20 nm was successfully prepared by chemical co-precipitation method with raw material SnCl4·5H2O and SbCl3.The resistivity,XRD and XPS comprehensive test analysis showed the large influence of Sb doped concentration,and the calcination temperature on the Sb distribution,valence existence forms,and the electrical resistivity in SnO2 grain was observed.Sb content doped into SnO2 powder would not change quartet rutile structure of SnO2.Sb was partly incorporated into the SnO2 lattice.The remaining atoms created a layer on the surface of SnO2,which provided a barrier for surface diffusion and suppress crystal growth during calcinations.