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一种硅光电接收处理集成电路的技术研究
引用本文:杨卫东,张正璠,李开成,欧红旗,黄文刚. 一种硅光电接收处理集成电路的技术研究[J]. 微电子学, 2006, 36(6): 767-769,773
作者姓名:杨卫东  张正璠  李开成  欧红旗  黄文刚
作者单位:模拟集成电路国家重点实验室;中国电子科技集团公司,第二十四研究所,重庆,400060
摘    要:介绍了一种在硅衬底上集成光电二极管探测器和双极接收放大处理电路的单芯片光电集成电路OEIC。从理论上阐述了光电器件实现的原理;为实现光电探测二极管与单片双极集成电路的兼容,设计了光电探测器的专用结构,并研制了光电探测器的专用模型。对接收处理电路进行了模拟仿真和优化设计。建立了与双极工艺兼容的制作光电二极管探测器的专用工艺;采用该工艺,对光电器件进行了版图设计、工艺制作和测试研究,给出了初步试验的方法和结果。

关 键 词:双极兼容工艺  光电二极管  光电探测器  互阻放大电路  双极集成电路
文章编号:1004-3365(2006)06-0767-03
收稿时间:2006-07-11
修稿时间:2006-07-112006-09-20

Development of an Si-Based Opto-Electronic Receiver/Amplifier IC
YANG Wei-dong,ZHANG Zheng-fan,LI Kai-cheng,OU Hong-qi,HUANG Wen-gang. Development of an Si-Based Opto-Electronic Receiver/Amplifier IC[J]. Microelectronics, 2006, 36(6): 767-769,773
Authors:YANG Wei-dong  ZHANG Zheng-fan  LI Kai-cheng  OU Hong-qi  HUANG Wen-gang
Abstract:An Si-based monolithic optoelectronic integrated circuit(OEIC) was developed,in which a photodiode detector and a bipolar IC for receiving and amplifying are incorporated. For compatibility with the bipolar IC,a special structure of PIN photodetector was designed,and a specific model for PIN photodetector was developed.The receiver/ampifier circuit were simulated and optimized.A special fabrication process for photodiode detector was established,which is compatible with bipolar technology.Based on the new process,optical and electronic devices were designed,fabricated and tested.The method and results of the preliminary development are discussed.
Keywords:Bipolar compatible technology  Photodiode  Photodetector  Transimpedance amplifier  Bipolar IC
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