| 新型金属氧化物薄膜气敏元件基材料的开发 |
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| 引用本文： | 田芳,张颖欣,张礼,侯秀萍,裘南畹.新型金属氧化物薄膜气敏元件基材料的开发[J].山东大学学报(工学版),2009,39(2):104-107. |
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| 作者姓名： | 田芳 张颖欣 张礼 侯秀萍 裘南畹 |
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| 作者单位： | 山东大学化学与化工学院;济南半导体实验所;山东大学物理学院; |
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| 基金项目： | 国家自然科学基金资助项目(60372030);;山东省火炬计划资助项目(111600/04040214) |
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| 摘 要： | 根据电导气敏机理的氧负离子理论,提出制备n型金属氧化物气敏基材料的理论,指出禁带宽度Eg＞2eV的金属氧化物材料都有可能研制薄膜气敏元件,并通过Fe2O3／1％Sb2O3和TiO2薄膜元件的制备和表征,论证了该理论的正确性.
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| 关 键 词： | 金属氧化物 薄膜气敏元件 基材料 |
| 收稿时间： | 2009-01-09 |
New basic materials development of a metal-oxide thin film gas sensor |
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| TIAN Fang,ZHANG Ying-xin,ZHANG Li,HOU Xiu-ping,QIU Nan-wan.New basic materials development of a metal-oxide thin film gas sensor[J].Journal of Shandong University of Technology,2009,39(2):104-107. |
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| Authors: | TIAN Fang ZHANG Ying-xin ZHANG Li HOU Xiu-ping QIU Nan-wan |
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| Affiliation: | 1. School of Chemistry and Chemical Engineering;Shandong University;Jinan 250100;China;2. Jinan Semi-conduction Institution;3. School of Physics;China |
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| Abstract: | According to the negative oxygen ion theory of the conductance gas sensing mechanism, the mechanism of n-metal oxide gas sensing basic materials was put forth, which showed that the thin film gas sensor could possibly be developed by all the metal-oxide materials Eg>2 eV. This mechanism was proved to be true by the preparation and characterization of Fe2O3/1%Sb2O3and TiO2thin film gas sensor. |
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| Keywords: | metal oxide thin film gas sensor basic material |
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