| 影响碲镉汞晶体电子迁移率的主要因素 |
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| 引用本文： | 萧继荣 林杏朝. 影响碲镉汞晶体电子迁移率的主要因素[J]. 红外技术, 1998, 20(1): 13-14 |
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| 作者姓名： | 萧继荣 林杏朝 |
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| 作者单位： | 中国科学院上海技术物理研究所 |
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| 摘 要： | 通过把迁移率的实测值与影响ＨｇＣｄＴｅ晶体电子迁移率的主要散射机构进行对比，得出结论：位错是ＨｇＣｄＴｅ晶体低温电子迁移率降低的主要原因。
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| 关 键 词： | 碲镉汞 电子迁移率 位错 红外光学材料 |
Main Factors of Influence on Electron Mobility of HgCdTe Crystals |
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| Xiao Jirong,Ling Xingchao. Main Factors of Influence on Electron Mobility of HgCdTe Crystals[J]. Infrared Technology, 1998, 20(1): 13-14 |
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| Authors: | Xiao Jirong Ling Xingchao |
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| Abstract: | The reduction of electron mobility of HgCdTe at 77K is mainly due to dislocation scat tering. It was proved by a comparison between measured mobility and mobility deduced from basic scattering mechanism. |
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| Keywords: | HgCdTe Mobility of electron Dislocation |
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