Synergistic microwave and structural studies of C-type Ho2Si2O7 |
| |
Authors: | Kishwar Khan Asghari Maqsood |
| |
Affiliation: | Thermal Transport Laboratory, School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad, Pakistan |
| |
Abstract: | Ho2Si2O7 material exists in four polymorphs, a triclinic low temperature phase (type-B), a monoclinic modification (type-C), high temperature monoclinic (type-D), and high temperature orthorhombic modification (type-E). The structural properties are measured by XRD and the morphology is noted through scanning electron microscopy (SEM). The dc electrical resistivity (ρ) as a function of temperature and dielectric properties of C-type Ho2Si2O7 in the microwave region is measured. The activation energy is calculated from ln ρ versus 1/kBT plot. The activation energy is 0.119 ± 0.001 eV. Both the real (?′) and imaginary parts of permittivity (?″) decrease slightly as the frequency increases up to 1.5 GHz, after that ?′ increases while ?″ decreases as the frequency increases. At around 2.45 GHz, resonance is observed. |
| |
Keywords: | Electrical transport Dielectric response X-ray diffraction Inorganic materials |
本文献已被 ScienceDirect 等数据库收录! |
|