Fabrication and properties of p-type K doped Zn1−xMgxO thin film |
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Authors: | L.Q. ZhangZ.Z. Ye J.Y. Huang B. LuH.P. He J.G. LuY.Z. Zhang J. JiangJ. Zhang K.W. WuW.G. Zhang |
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Affiliation: | State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, People''s Republic of China |
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Abstract: | A series of K doped Zn1−xMgxO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn1−xMgxO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn0.95Mg0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 1018 cm−3. Furthermore, a simple ZnO-based p-n heterojunction was prepared by deposition of a K-doped p-type Zn0.95Mg0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p-n diode heterostructure exhibits typical rectification behavior of p-n junctions. |
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Keywords: | Semiconductor K doped Zn1&minus xMgxO P-type Pulsed laser deposition |
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