Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method |
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| Authors: | Xia Liu Hang Song Guoqing MiaoHong Jiang Lianzhen Cao Dabing LiXiaojuan Sun Yiren ChenZhiming Li |
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| Affiliation: | a Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dong Nanhu Road 3888 Changchun Jilin Changchun 130033, PR China
b Graduate school of the Chinese Academy of Sciences, Beijing 100039, PR China |
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| Abstract: | In0.82Ga0.18As epilayers were grown by LP-MOCVD on InP substrates with the insertion of In0.82Ga0.18As buffer layers, which were annealed at various temperatures between 490 °C and 630 °C for 5 min in AsH3 ambient. The effect of buffer layer annealing temperatures on the crystalline quality of In0.82Ga0.18As epilayers was investigated by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and room-temperature Hall measurement. The characterization results showed that high quality In0.82Ga0.18As epilayers were obtained by optimizing the annealing temperatures of buffer layers. In particular, the In0.82Ga0.18As epilayer with buffer layer annealed at 530 °C showed the best crystalline quality. The changes of crystalline quality of In0.82Ga0.18As epilayers at high and low annealing temperature can be attributed to the recrystallization and reevaporation of the In0.82Ga0.18As buffer layers. |
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| Keywords: | In0 82Ga0 18As MOCVD Buffer layer annealing temperature Crystalline quality |
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