Growth of Lattice-Matched ZnTeSe Alloys on (100)and (211)B GaSb

A key issue with the current HgCdTe/Si system is the high dislocation density due to the large mismatch between HgCdTe and Si. An alternative system that has superior lattice matching is HgCdSe/GaSb. A buffer layer to mitigate issues with direct nucleation of HgCdSe on GaSb is ZnTe_1?x Se _x . We have performed preliminary studies into the growth of lattice-matched ZnTe_1?x Se _x on both (100) and (211)B GaSb. The effects of substrate orientation, substrate temperature, and growth conditions on the morphology and crystallography of ZnTe_0.99Se_0.01 alloys were investigated. The lattice-matching condition yielded minimum root-mean-square (rms) roughness of 1.1?nm, x-ray rocking curve full-width at half-maximum (FWHM) value of ~29?arcsec, and density of nonradiative defects of mid-10⁵?cm^?2 as measured by imaging photoluminescence.