1.3 μm InAsyP1-y-InPstrained-layer quantum-well laser diodes grown by metalorganic chemicalvapor deposition |
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| Authors: | Kasukawa A. Namegaya T. Fukushima T. Iwai N. Kikuta T. |
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| Affiliation: | Furukawa Electric Co., Ltd., Yokohama; |
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| Abstract: | The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm 2 was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure |
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