| 高性能InGaAs/AlAs共振隧穿二极管的研制与器件模拟分析 |
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| 引用本文： | 马龙,张杨,戴扬,杨富华,曾一平,王良臣. 高性能InGaAs/AlAs共振隧穿二极管的研制与器件模拟分析[J]. 半导体学报, 2007, 28(4): 563-566 |
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| 作者姓名： | 马龙 张杨 戴扬 杨富华 曾一平 王良臣 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 在半绝缘的InP衬底上采用分子束外延的方法生长制备了不同势垒厚度的RTD材料样品,室温下测量的最高峰-谷电流比为18.39.通过模拟得到RTD直流特性与势垒厚度、势阱材料及厚度、隔离层厚度以及掺杂浓度间的关系,对结果进行了分析与讨论.
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| 关 键 词： | 共振隧穿二极管 峰-谷电流比 电流-电压特性 器件模拟 |
| 文章编号： | 0253-4177(2007)04-0563-04 |
| 收稿时间： | 2006-09-22 |
| 修稿时间： | 2006-11-08 |
Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates |
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| Ma Long,Zhang Yang,Dai Yang,Yang Fuhua,Zeng Yiping,Wang Liangchen. Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates[J]. Chinese Journal of Semiconductors, 2007, 28(4): 563-566 |
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| Authors: | Ma Long Zhang Yang Dai Yang Yang Fuhua Zeng Yiping Wang Liangchen |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | Resonant tunneling diodes (RTDs) with different barrier thicknesses were grown by molecular beam epitaxy (MBE) on semi-insulating InP substrates.The highest peak-to-valley current ratio is 18.39 at room temperature.The relationship between RTD direct current characteristics with barrier thickness,well and sub-well thickness,spacer thickness,and doping density are analyzed and discussed. |
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| Keywords: | resonant tunneling diodes peak-to-valley current ratio current-voltage characteristics device simulation |
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