Theory of the MOS transistor in weak inversion-new method to determine the number of surface states |
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Abstract: | The drain current IDversus gate voltage VGof an MOST operating in weak inversion, and the influence of surface potential fluctuations on this characteristic have been studied before 1], 2]. The purpose of this paper is to derive an expression of the drain current IDversus the drain voltage VDfor devices with a channel length not smaller than 20 µm. It is demonstrated that the surface potential fluctuations do not affect the slope of the ID-VDcurve, whereas the density Nssof surface states strongly influences the slope for small drain voltages. This yields a simple and useful technique to determine Nsson MOS transistors. |
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