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退火对直流磁控溅射铬膜附着性的影响
引用本文:范洪远,向文欣,李伟,应诗浩,彭倩,沈保罗. 退火对直流磁控溅射铬膜附着性的影响[J]. 核动力工程, 2003, 24(2): 149-152
作者姓名:范洪远  向文欣  李伟  应诗浩  彭倩  沈保罗
作者单位:1. 四川大学,成都,610065
2. 中国核动力研究设计院,成都,610041
基金项目:核燃料及材料国家重点实验室基金资助
摘    要:为了利用铬膜改善锆的抗腐蚀性,研究了退火对Zr-2基体上制备的直流磁控溅射铬膜附着性的影响,使用扫描电镜(SEM)观察了界面形貌及锆,铬的界面的分布,用X-射线衍射仪(XRD)分析了膜层的组成,用划痕法测定了铬膜的附着,结果表明,锆/铬界面结合良好,边界可见;与现有文献比较,获得的铬膜附着性好――均超过20N;溅射后退火使Zr-Cr界面更像扩散界面,但X-射线衍射结果未发现有界面反应产物;退火提高铬膜与Zr-2基体的附着性约50%,扩散际着附着性增加的主要因素。

关 键 词:退火 直流磁控溅射 铬膜 附着性
文章编号:0258-0926(2003)02-0149-04
修稿时间:2002-07-10

Effect of Annealing on Adhesion of Cr Films Deposited by D.C Magnetron Sputtering
FAN Hong-yuan,XIANG Wen-xin,LI Wei,YING Shi-hao,PENG Qian,SHEN Bao-luo. Effect of Annealing on Adhesion of Cr Films Deposited by D.C Magnetron Sputtering[J]. Nuclear Power Engineering, 2003, 24(2): 149-152
Authors:FAN Hong-yuan  XIANG Wen-xin  LI Wei  YING Shi-hao  PENG Qian  SHEN Bao-luo
Affiliation:FAN Hong-yuan1,XIANG Wen-xin2,LI Wei1,YING Shi-hao2,PENG Qian2,SHEN Bao-luo1
Abstract:Authors try to use chromium thin films deposited by D.C magnetron sputtering to improve the corrosion-resistance of zirconium. The effect of annealing on adhesion of the chromium film on Zr-2 sub-strates has been studied. The composition of the chromium film was identified by X-ray diffraction (XRD), the interface of Cr/Zr was studied with scanning electron microscope (SEM), scratch adhesion tests were performed on a WS-97 Automatic Scratch Tester. The XRD inspection confirms that the film consists of pure chromium, no compound or inter-phase was found, but there is sharp preferred orientation in Cr film. The SEM analysis has found that interface of Cr/Zr is well-knit, though there are visible boundary. Scratch tests have demonstrated a good adhesion for the Cr films: bond strength is more than 20N. It is found out that an-nealing could enhance the adhesion of the Cr films to the substrates, which increases by 50% or so. The rea-son why adhesion adds is diffusion.
Keywords:Annealing  D.C. magnetron sputtering  Chromium films  Adhesion  
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