Modifying Structures and Ferroelectric Properties of Pb(Zr0.6Ti0.4)O3 Thin Films by Constraint-Annealing of Precrystallized Film |
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| Authors: | Fan-Yi Hsu Ching-Chich Leu Yen-Liang Lu Shu-Te Ho Chen-Ti Hu |
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| Affiliation: | Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC |
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| Abstract: | A tensile or compressive mechanical constraint was applied, during annealing, on the Pb(Zr0.6Ti0.4)O3 (PZT) ferroelectric films to investigate the effects of stress on its crystal structure and electric properties. The external stress was applied by bending the substrate into a circular section. By using both precrystallized film structure and high constraint strain (0.08%), the stress states of PZT during the crystallization process became controllable. Structural change of polycrystalline PZT was observed when crystallized under a compression constraint. Moreover, these films with compression constraint annealing exhibited enhanced remnant polarization by ～70% and increased dielectric constant by ～68%. The variations in ferroelectric behaviors were correlated to domain configuration, texture, amount of pyrochlore phase, grain size and residual stress, which are dependent on the stress state during annealing process. |
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