| 多孔硅的电致发光 |
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| 引用本文： | 施洪涛 王永宾. 多孔硅的电致发光[J]. 固体电子学研究与进展, 1993, 13(3): 201-204 |
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| 作者姓名： | 施洪涛 王永宾 |
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| 作者单位： | 南京大学物理系 210008(施洪涛，郑有炓，王永宾)，南京大学物理系 210008(袁仁宽) |
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| 摘 要： | 采用横向阳极氧化技术在n型单晶硅衬底上制备多孔硅,室温下光荧光谱峰值位于688nm;表面蒸铝形成铝/多孔硅/硅的类肖特基结构,并观察到采用这种方法生长的多孔硅样品的室温电致发光。铝/多孔硅结具有良好的整流特性,在-10V内反向漏电流小于50nA,理想因子为7。室温电致发光的阈值电流为8.5mA,发光强度随正向电流的增加而加强。
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| 关 键 词： | 阳极氧化 多孔硅 肖特基结 电致发光 |
Current-Induced Light Emission from a Porous Silicon Device |
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| Shi Hongtao,Zheng Youdou,Wang Yongbin,Yuan Renkuan. Current-Induced Light Emission from a Porous Silicon Device[J]. Research & Progress of Solid State Electronics, 1993, 13(3): 201-204 |
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| Authors: | Shi Hongtao Zheng Youdou Wang Yongbin Yuan Renkuan |
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| Abstract: | The luminescent porous silicon(PS) with a peak at 688 nm was fab-ricated on an n-type silicon substrate by lateral anodization. Al/PS Schottky-like junction exhibits good rectifying characteristics with an ideality factor of 7. The cur-rent-induced light emission (CILE) from such a device can be abserved when the forward electrical current is more than 8-5 mA. The reverse bias leakage current within -10 V is less than 50 nA. The intensity of CILE increases with increasing forward current. |
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| Keywords: | Anodization Porous Silicon Schottky Junction Electrolumine-scence |
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