Effects of insulating layer on the performance of thin film electroluminescent devices |
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| Authors: | M K Jayaraj C P G Vallabhan |
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| Affiliation: | (1) Department of Physics, Cochin University of Science and Technology, 682 022 Cochin, India;(2) Present address: Physical Research Laboratory, 380 009 Navrangpura, Ahmedabad, India |
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| Abstract: | Thin film electroluminescent devices were fabricated with active layer of ZnS:Mn and different insulators viz Sm2O3, Eu2O3, Na3A1F6, MgF2, CeO2 and SiO in MIS and MISIM structure. The threshold voltage for light emission in AC thin film electroluminescent devices of MIS and MISIM structures is found to depend on the dielectric properties of insulating materials. The observed threshold voltage for these devices and its variations for devices with different insulators are explained using the equivalent circuit for the device and the dielectric properties of the insulting material used for the preparation of device. Variation of threshold voltage with operating time is also studied for some of the devices. |
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| Keywords: | Electroluminescent devices threshold voltage insulating layer |
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