| 多晶硅发射极晶体管的低频噪声特性 |
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| 引用本文： | 刘炳国,肖金生,洪垣.多晶硅发射极晶体管的低频噪声特性[J].固体电子学研究与进展,1988(2). |
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| 作者姓名： | 刘炳国 肖金生 洪垣 |
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| 作者单位： | 华南工学院
(刘炳国，肖金生)，上海科技大学分部(洪垣) |
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| 摘 要： | 本文报导在2～2kHz的频率范围内测得的多晶硅发射极晶体管的低频噪声频谱,并论述低频噪声的产生机理。多晶硅发射极晶体管具有较常规晶体管优异的低频噪声特性而可望成为一种合适的低频低噪声器件。
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The Low-Frequency Noise Behavior of the Polysilicon Emitter Transistor |
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| Abstract: | This paper deals with the low-frequency noise spectra (measured at the frequencies ranged from 2Hz to 2kHz) of the transistor with polysilicon emitter,and the generation mechanism of this low-frequency noise. The polysilicon emitter transistor has an excellent low-frequency noise behavior, and thus can become a suitable low-frequency device with a low noise figure. |
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