| Ti中间层对超薄Ni膜硅化反应特性的影响 |
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| 引用本文： | 蒋玉龙,茹国平,屈新萍,李炳宗.Ti中间层对超薄Ni膜硅化反应特性的影响[J].半导体学报,2005,26(13):45-48. |
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| 作者姓名： | 蒋玉龙 茹国平 屈新萍 李炳宗 |
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| 作者单位： | 复旦大学微电子学系，上海 200433;复旦大学微电子学系，上海 200433;复旦大学微电子学系，上海 200433;复旦大学微电子学系，上海 200433 |
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| 摘 要： | 在多种Si衬底上利用离子束溅射淀积超薄Ni膜以及Ni/Ti双层膜，经过快速热退火处理完成薄膜的固相硅化反应，通过四探针法、微区喇曼散射法和俄歇深度分布测试法研究了Ti中间层对Ni硅化反应的影响. 实验结果证明Ti中间层抑制了集成电路生产最需要的NiSi相的形成.
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| 关 键 词： | 硅化物 NiSi 固相反应 |
Influence of Ti Interlayer on Untrathin Ni Film Silicidation |
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| Jiang Yulong,Ru Guoping,Qu Xinping and Li Bingzong.Influence of Ti Interlayer on Untrathin Ni Film Silicidation[J].Chinese Journal of Semiconductors,2005,26(13):45-48. |
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| Authors: | Jiang Yulong Ru Guoping Qu Xinping and Li Bingzong |
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| Affiliation: | Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China |
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| Abstract: | Ultra thin Ni(5nm) film and Ni(5nm)/Ti(1nm) complex film are deposited on various Si substrates by ion beam sputtering,followed by rapid thermal annealing for solid state silicidation.Four point probe method,micro-Raman scattering spectroscopy,and Auger electron spectroscopy are employed to investigate the influence of Ti interlayer on Ni/Si reaction.Experimental results show that the Ti interlayer will retard the formation of NiSi. |
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| Keywords: | silicide NiSi solid-state reaction |
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