| Cu/Ta/SiO_2/Si多层膜纳米压痕与压痕下微观结构的研究 |
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| 引用本文： | 卢茜,吴子景,吴晓京,Weidian Shen,蒋宾. Cu/Ta/SiO_2/Si多层膜纳米压痕与压痕下微观结构的研究[J]. 电子显微学报, 2008, 27(4) |
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| 作者姓名： | 卢茜 吴子景 吴晓京 Weidian Shen 蒋宾 |
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| 作者单位： | [1]复旦大学材料科学系 ,上海200433 [2]复旦大学微纳米电子平台,上海200433 [3]东密歇根州大学天文物理系,美国密歇根州伊普西兰蒂,M148197 [4]上海集成电路R＆D中心,上海201203 |
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| 基金项目： | 上海市科委资助项目(No.0552nm049); 上海市重点学科建设项目资助(No.:B113) |
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| 摘 要： | Cu/Ta/SiO2/Si多层膜结构是目前集成电路制造工艺中的常见结构,其硬度与弹性模量通过纳米压入技术测得。为了表征纳米压痕下的形变微观区域,采用聚焦离子束加工出压痕截面,同时进行扫描电子、扫描离子显微观察,发现样品衬底发生开裂,多层膜结构出现分层现象。TEM分析表明分层出现在Ta/SiO2界面,说明这是该结构的一个薄弱环节。
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| 关 键 词： | Cu/Ta/SiO2/Si多层膜结构 纳米压入技术 压痕下微观结构 |
Study of nanoindentation and microstructure below the residual indent on Cu/Ta/SiO_2/Si multilayer |
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| LU Qian,WU Zi-jing,WU Xiao-jing,SHEN Wei-dian,JIANG Bin. Study of nanoindentation and microstructure below the residual indent on Cu/Ta/SiO_2/Si multilayer[J]. Journal of Chinese Electron Microscopy Society, 2008, 27(4) |
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| Authors: | LU Qian WU Zi-jing WU Xiao-jing SHEN Wei-dian JIANG Bin |
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| Affiliation: | LU Qian~1,WU Zi-jing~1,WU Xiao-jing~(1,2*),SHEN Wei-dian~3,JIANG Bin~4(1.Department of Materials Science,Fudan University,Shanghai 200433,2.Micro-Nanoelectronics Platform,3.Department of Physics , Astronomy,Eastern Michigan University,Ypsilanti,MI 48197,USA,4.Shanghai Integrated Circuit R&D Center,Shanghai 201203,China) |
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| Abstract: | Nanoindentation was adopted to investigate the compound hardness and elastic modulus of Cu/Ta/SiO_2/Si multilayer thin film system,which is a typical structure widely used in the manufacture of integrated circuit.In order to reveal the structure variance,a residual indent was cut by FIB.The cross-section of the residual indent was observed by scanning electron microscope(SEM),as well as scanning ion microscope(SIM).Transmission electron microscope(TEM) analysis showed that the delamination occurred at the i... |
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| Keywords: | Cu/Ta/SiO_2/Si multilayer nanoindentation microstructure of the indent |
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