Self-aligned GaAs MISFET's with a low-temperature-grown GaAs gateinsulator |
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Authors: | Chen CL Mahoney LJ Nichols KB Manfra MJ Gramstorff BF Molvar KM Murphy RA Brown ER |
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Affiliation: | Lincoln Lab., MIT, Lexington, MA; |
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Abstract: | GaAs MISFET's with a low-temperature-grown (LTG) GaAs gate insulator and ion-implanted self-aligned source and drain n+ regions are demonstrated. The resistivity and breakdown field of the LTG GaAs insulator were not changed appreciably by implantation and 800°C activation annealing. The gate leakage current remained very low at a value of approximately 1 μA per μm2 of gate area at 3 V forward gate bias. Because of the reduced source and drain resistance, the drain saturation current and the transconductance of self-aligned MISFET's increased more than twofold after ion implantation |
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