Characterization of defect density created by stress in the gate to?drain overlap region using GIDL current model in n-channel MOSFET 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Characterization of defect density created by stress in the gate to?drain overlap region using GIDL current model in n-channel MOSFET

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