Application of the R-matrix method in quantum transport simulations

The paper gives an overview of recently developed method for effective quantum transport simulations in nanoscale electronic devices. In the present formulation the device is treated as a set of independent close subsystems with appropriate low-dimensional basis representations. In continuous transport models, the local R-matrix basis makes it possible to avoid discretization of the device area and achieve a much higher numerical accuracy with a lower computational burden compared to common grid schemes. Furthermore, the local basis representation provides a suitable framework for studying ionized impurity scattering by adjusting the shape of the device elements and their internal coordinate representation. Non-equilibrium current carrying electronic states are constructed by a recursive propagation scheme such that the major portion of the computation time scales linearly with the device volume. As an illustration, we apply the method to study ionized impurity scattering in a short Si channel.