| Thermal expansion of lattice parameter of （powder） silicon up to 1473 K |
| |
| 引用本文： | XING Xianran,CHEN Jun,DENG Jinxia,and LIU GuirongDepartment of Physical Chemistry,University of Science and Technology Beijing,Beijing 100083,China. Thermal expansion of lattice parameter of （powder） silicon up to 1473 K[J]. 稀有金属(英文版), 2004, 23(4): 364-367 |
| |
| 作者姓名： | XING Xianran CHEN Jun DENG Jinxia and LIU GuirongDepartment of Physical Chemistry University of Science and Technology Beijing Beijing 100083 China |
| |
| 作者单位： | XING Xianran，CHEN Jun，DENG Jinxia，and LIU GuirongDepartment of Physical Chemistry，University of Science and Technology Beijing，Beijing 100083，China |
| |
| 基金项目： | ThisworkwasfinanciallysupportedbytheNationalNaturalScienceFoundationofChina(Nos.20171006and20331030),FundsofMinistryofEducationofChinaforTRAPOYTProgramandTrainingPhD.CandidatesProgram(No.2001008005). |
| |
| 摘 要： | The XRPD (X-ray powder diffxactometry) patterns of silicon powder with a unit cell structure of diamond were determined from 298 to 1473 K. Lattice parameters of Si linearly increase with temperature. The thermal shifts of the positions of all reflection peaks are linearly correlated with the temperature. The coefficients of the intrinsic linear thermal expansion and volumetric thermal expansion were determined as 3.87×10-6/K and 1.16×10-5/K respectively. It indicates that Si is still a suitable standard in the XRPD method at high temperatures.
|
| 关 键 词： | 热膨胀现象 晶格参数 硅 X射线分析技术 胞状结构 半导体 |
Thermal expansion of lattice parameter of (powder) silicon up to 1473 K |
| |
| XING Xianran,CHEN Jun,Deng Jinxia,LIU Guirong. Thermal expansion of lattice parameter of (powder) silicon up to 1473 K[J]. Rare Metals, 2004, 23(4): 364-367 |
| |
| Authors: | XING Xianran CHEN Jun Deng Jinxia LIU Guirong |
| |
| Affiliation: | Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China |
| |
| Abstract: | The XRPD (X-ray powder diffractometry) patterns of silicon powder with a unit cell structure of diamond were determined from 298 to 1473 K. Lattice parameters of Si linearly increase with temperature. The thermal shifts of the positions of all reflection peaks are linearly correlated with the temperature. The coefficients of the intrinsic linear thermal expansion and volumetric thermal expansion were determined as 3.87×10-6/K and 1.16 × 10-5/K respectively. It indicates that Si is still a suitable standard in the XRPD method at high temperatures. |
| |
| Keywords: | metallurgical physical chemistry thermal expansion high temperature X-ray powder diffraction (HTXRPD) silicon. |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
