首页 | 本学科首页   官方微博 | 高级检索  
     

合成温度对LiMn1.95Mg0.05O4结构与性能的影响
引用本文:伊廷锋.合成温度对LiMn1.95Mg0.05O4结构与性能的影响[J].稀有金属快报,2008,27(4):22-26.
作者姓名:伊廷锋
作者单位:安徽工业大学,安徽,马鞍山,243002;哈尔滨工业大学,黑龙江,哈尔滨,150001
摘    要:用柠檬酸辅助溶胶一凝胶法在不同温度下合成了LiMn1.95Mg0.05O4正极材料。用X射线衍射、充放电测试以及电化学阻抗谱分析技术研究了不同合成温度对LiMn1.95Mg0.05O4结构和电化学性能的影响。结果表明:合成温度对LiMn1.95Mg0.05O4正极材料的晶相结构、电化学性能有显著影响,LiMn1.95Mg0.05O4尖晶石相的生成和长大与其合成的温度有密切的关系,合成的最佳温度为750℃;在750℃条件下合成的LiMn1.95Mg0.05O4具有较高的电化学活性和较好的晶相结构;高温合成有利于提高LiMn1.95Mg0.05O4正极材料的放电容量,低温合成有利于提高其循环性能。

关 键 词:锂离子电池  正极材料  LiMn1.95Mg0.05O4  合成温度
文章编号:1008-5939(2008)04-022-05
修稿时间:2008年3月25日

Effect of Synthesis Temperatures on Structure and Performance of LiMn1.95Mg0.05O4
Yi Tingfeng.Effect of Synthesis Temperatures on Structure and Performance of LiMn1.95Mg0.05O4[J].Rare Metals Letters,2008,27(4):22-26.
Authors:Yi Tingfeng
Affiliation:Yi Tingfeng(1. Anhui University of Technology, Maanshan 243002, (2. Harbin Institute of Technology, Harbin 150001, China) China)
Abstract:LiMn1.95Mg0.05O4 cathode material has been prepared by citric acld-assisted sol-gel method at different temperatures. The ef- fects of different synthesized temperatures .qn structure and electrochemical performance of LiMn1.95Mg0.05O4 were investigated by X-ray diffraction (XRD), galvanostatic charge-discharge test, and electrochemical impedance spectroscopy (EIS), respectively. The results show that synthesis temperature has significant effects on the crystal structure and electrochemical performance of LiMn1.95Mg0.05O4 cathode material, and the formation and growth of spinel phase intimately relates to synthesis temperatures; the optimal synthesis temperature of LiMn1.95Mg0.05O4 is about 750 ℃. LiMn1.95Mg0.05O4 synthesized at 750℃ has higher electrochemical activity and crystal structure. It is propitious to improve discharge capacity of LiMn1.95Mg0.05O4 cathode materials at high synthesis temperature and increase its cycle performance at low synthesis temperature.
Keywords:lithium ion battery  cathode material  LiMn1  95Mg0.05O4  synthesis temperature
本文献已被 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号