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三明治结构FeNi/Cu/FeNi多层膜巨磁阻抗效应研究
引用本文:周勇,丁文,曹莹,商干兵,周志敏,高孝裕,余先育. 三明治结构FeNi/Cu/FeNi多层膜巨磁阻抗效应研究[J]. 功能材料与器件学报, 2006, 12(3): 182-186
作者姓名:周勇  丁文  曹莹  商干兵  周志敏  高孝裕  余先育
作者单位:上海交通大学微纳科学技术研究院,微米/纳米加工技术国家级重点实验室,薄膜与微细技术教育部重点实验室,上海,200030
基金项目:教育部科学技术研究项目 , 国家高技术研究发展计划(863计划) , 国家高技术研究发展计划(863计划) , 上海市纳米科技专项基金
摘    要:采用MEMS技术在玻璃基片上制备了三明治结构FeNi/Cu/FeNi多层膜,在1~40 MHz范围内研究了FeNi/Cu/FeNi多层膜中的巨磁阻抗效应特性.当磁场Ha施加在薄膜的长方向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应.在频率为5MHz时,巨磁阻抗效应在磁场Ha=800 A/m时达到最大值26.6%.巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及发散有关.另外,当磁场施加在薄膜的短方向时,薄膜表现出负的巨磁阻抗效应,在频率5 MHz、磁场Ha=9600 A/m时,巨磁阻抗效应可达-15.6%.

关 键 词:巨磁阻抗效应  三明治结构FeNi/Cu/FeNi多层膜  MEMS技术
文章编号:1007-4252(2006)03-0182-05
收稿时间:2005-08-08
修稿时间:2005-08-082005-11-14

Giant magneto- impedance in sandwiched FeNi/Cu/FeNi films
ZHOU Yong,DING Wen,CAO Ying,SHANG Gan-bing,ZHOU Zhi-min,GAO Xiao-yu,YU Xian-yu. Giant magneto- impedance in sandwiched FeNi/Cu/FeNi films[J]. Journal of Functional Materials and Devices, 2006, 12(3): 182-186
Authors:ZHOU Yong  DING Wen  CAO Ying  SHANG Gan-bing  ZHOU Zhi-min  GAO Xiao-yu  YU Xian-yu
Abstract:Sandwiched FeNi/Cu/FeNi films were prepared by MEMS(Microelectromechanical Systems) technique on glass substrate.The giant magneto-impedance(GMI) effect was investigated in the frequency range of 1~40 MHz.With magnetic field H_a applied along the longitudinal direction of the sample,the GMI ratio increases with H_a,reaching a positive maximum value at a certain field and then decreases to the negative GMI ratio with further increase of H_a.At a frequency of 5 MHz,the positive maximum GMI ratio is 26.6% for H_a=800 A/m.In addition,with the magnetic field applied along the transverse direction,the GMI ratio is negative and a negative GMI ratio,-15.6% is obtained at 5 MHz for H_a=9600 A/m.
Keywords:giant magneto- impedance   sandwiched FeNi/Cu/FeNi films   MEMS technique
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