GaAs planar doped barrier diodes for millimetre-wave detector applications

Epitaxially grown GaAs planar doped barrier diodes have been designed and fabricated into coplanar structures specifically for millimetre-wave zero-bias detector applications. Results at 35 GHz and 94 GHz show that the tangential sensitivity, voltage sensitivity and dynamic range of these devices can significantly exceed those of any comparable Schottky diode detector. This is the first report of such a result.<>