| 低压化学气相淀积多晶硅薄膜工艺研究 |
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| 引用本文： | 谭刚,吴嘉丽,李仁锋. 低压化学气相淀积多晶硅薄膜工艺研究[J]. 新技术新工艺, 2006, 0(11): 34-35 |
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| 作者姓名： | 谭刚 吴嘉丽 李仁锋 |
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| 作者单位： | 中国工程物理研究院,电子工程研究所,四川,绵阳,621900 |
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| 摘 要： | 在研制器件过程中，多晶硅制备的工艺条件对其性能影响较大。讨论了低压化学气相淀积（LPCVD）关键材料多晶硅薄膜的基本原理，考察了工作压力、反应温度等对多晶硅薄膜淀积速率的影响，以及影响多晶硅薄膜质量的因素，提出了改进措施，优化了多晶硅制备工艺参数，制备了合格的多晶硅薄膜。
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| 关 键 词： | 低压化学气相淀积 多晶硅薄膜 淀积速率 优化 |
| 收稿时间： | 2006-05-11 |
| 修稿时间： | 2006-05-11 |
Research on Polysilicon Thin Film Technics by LPCVD |
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| TAN Gang,WU Jiali,LI Renfeng. Research on Polysilicon Thin Film Technics by LPCVD[J]. New Technology & New Process, 2006, 0(11): 34-35 |
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| Authors: | TAN Gang WU Jiali LI Renfeng |
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| Abstract: | The technological conditions of polysilicon preparation has an important effect on the manufacturing process. The principles of polysilicon film as the key material of low pressure chemical vapor deposition (LPCVD ) are introduced. The growth rate of the film is investigated with the variation of deposition parameters,including working voltage and reaction temperature. And the influencing factors on quality of polysilicon film are analyzed. In the paper the modified measures are proposed, preparation technical process are optimized and qualified polysilicon films are prepared. |
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| Keywords: | LPCVD polysilicon films deposition rate optimize |
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