| 掺硼和掺磷硅衬底生长SiO2膜及其电离辐照效应的XPS研究 |
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| 引用本文： | 刘昶时,刘芬.掺硼和掺磷硅衬底生长SiO2膜及其电离辐照效应的XPS研究[J].核技术,1995,18(2):98-103. |
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| 作者姓名： | 刘昶时 刘芬 |
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| 作者单位： | 中国科学院新疆物理研究所，航空航天部骊山微电子技术研究所，北京理化分析测试中心 |
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| 基金项目： | 北京中关村联合测试中心测试基金 |
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| 摘 要： |
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| 关 键 词： | 硼 磷 硅衬底 二氧化硅膜 XPS 掺杂 |
XPS studies of Si-SiO_2 grown On B-and P-doped single crystal silicon and its~(60)Co irradiation effect |
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| Liu Changshi.XPS studies of Si-SiO_2 grown On B-and P-doped single crystal silicon and its~(60)Co irradiation effect[J].Nuclear Techniques,1995,18(2):98-103. |
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| Authors: | Liu Changshi |
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| Abstract: | The Si-SiO2 films prepared on B-and P-doped single crystal Si were studied with XPS before and after 60Co irradiation.The experimental results show that there were remarkable differences in SiO2 state(BE=103.4eV),Si transitional state(BE=101.5eV) and surplus oxygen state(BE=529.6eV) for the two kinds of Si-SiO2 film whether they were irradiated or not,and the influence of B on the XPS spectra was greater than that of P.The XPS spectra analysis indicates that,during the formation of SiO2,the substrate impurity and the oxidation process have equal importance in quality control.Finally,experiment results are discussed from the view points of the electron configuration of atomic ground state and the difference of diffusive feature between B and P. |
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| Keywords: | Boron Phosphorous XPS Si-SiO_2 |
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