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| 材料制备工艺 | |
| 摘 要： | IELDVD060:9322:29630-53 0600555 电介质故障感应式晶体外延:超薄门电路电介质普遍的故障缺陷=Dielectric-breakdown-induced epitaxy:a universal breakdown defect in ultrathin gate dielectrics [会,英]／Ranjan,R．／／Physical and Failure Analysis of Integrated Circuits,2004．IPFA 2004．Proceedings of the 11th International Symposium on the．-53-56(A) 0600556 光电器件用BexZn1-xTe合金特性及分子束外延生长 =Molecular-beam epitaxy growth and properties of |
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