Influence of the doping level and the temperature on electron mobility in then channel of an mos field-effect transistor

Based on results of measurement and processing of volt-ampere characteristics as well as linetic modeling of electron transfer by the Monte Carlo method, the influence of the doping level and the temperature on electron mobility in the n channel of a silicon MOS field-effect transistor operating in a linear regime is investigated. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 71, No. 1, pp. 116–119, January–February, 1998.