| 纳米级富氮SiOxNy薄膜的电子注入损伤研究 |
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| 引用本文： | 张昊,陈蒲生,田小峰,冯文修,刘小阳. 纳米级富氮SiOxNy薄膜的电子注入损伤研究[J]. 半导体技术, 2000, 25(1): 42-45 |
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| 作者姓名： | 张昊 陈蒲生 田小峰 冯文修 刘小阳 |
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| 作者单位： | 1. 华南理工大学应用物理系,广州,510641
2. 华南理工大学分析测试中心,广州,510641 |
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| 摘 要： | 研究了在３０Ｖ的直流偏压下，对ＰＥＣＶＤ工艺制备的ＳｉＯｘＮｙ薄膜进行电子注入，并结合俄歇谱和红外光谱对实验结果进行了讨论。结果表明，薄膜内有较多的受主陷阱，平带电压漂移在小电流下有显著变化，该方法对薄膜界面造成的损伤较小，禁带中的界面态密度变化不明显。
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| 关 键 词： | 介质膜 电子注入 纳米级 VLSI |
Electron Injection Damnification Study of Nitrogen-Rich SiOxNy Thin Film at Nanometer |
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| Zhang Hao,Chen Pusheng,Tian Xiaofeng,Feng Wenxiu,Liu Xiaoyang. Electron Injection Damnification Study of Nitrogen-Rich SiOxNy Thin Film at Nanometer[J]. Semiconductor Technology, 2000, 25(1): 42-45 |
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| Authors: | Zhang Hao Chen Pusheng Tian Xiaofeng Feng Wenxiu Liu Xiaoyang |
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| Abstract: | In this paper,we study that electron is injected into SiO x N y thin film prepared with PECVD process under the condition of 30V direct voltage,at the same time we discuss the experimental results combining AES spectrum and infrared absorption spectrum.The results show there are some acceptor traps in this thin film,the flat band shift changes obviously in little current;the damnification of interface caused by the electron injected is very small,and the variation of the interface density in forbidden band is not obvious. |
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| Keywords: | Interface trap Avalance Dielectric film Hot electron injection |
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