Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts |
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| Authors: | Lin Y.C. Chang S.J. Su Y.K. Tsai T.Y. Chang C.S. Shei S.C. Hsu S.J. Liu C.H. Liaw U.H. Chen S.C. Huang B.R. |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87% at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 /spl times/ 10/sup -4/ /spl Omega/ /spl middot/ cm/sup 2/ and 1 /spl times/ 10/sup -3/ /spl Omega/ /spl middot/ cm/sup 2/, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer. |
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