| 衬底驱动超低压CMOS带隙基准电压源 |
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| 引用本文： | 张海军,杨银堂,朱樟明,张宝君. 衬底驱动超低压CMOS带隙基准电压源[J]. 固体电子学研究与进展, 2006, 26(4): 531-535 |
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| 作者姓名： | 张海军 杨银堂 朱樟明 张宝君 |
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| 作者单位： | 西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家自然科学基金 , 国家预研基金 |
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| 摘 要： | 采用二阶温度补偿和电流反馈技术,设计实现了一种基于衬底驱动技术和电阻分压技术的超低压CMOS带隙基准电压源。采用衬底驱动超低压运算放大器作为基准源的负反馈,使其输出用于产生自身的电流源偏置,其电源抑制比(PSRR)为-63.8dB。采用Hspice仿真,在0.9V电源电压下,输出基准电压为572.45mV,温度系数为13.3ppm/°C。在0.8~1.4V电源电压范围内,输出基准电压变化3.5mV。基于TSMC0.25μm2P5MCMOS工艺实现的衬底驱动带隙基准电压源的版图面积为203μm×478.1μm。
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| 关 键 词： | 衬底驱动 超低压 互补金属氧化物半导体 带隙基准源 温度系数 电源抑制比 |
| 文章编号： | 1000-3819（2006）04-531-05 |
| 收稿时间： | 2005-09-30 |
| 修稿时间： | 2006-01-04 |
Ultra-low Voltage CMOS Bandgap Voltage Reference Based on Bulk-driven Technique |
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| ZHANG Haijun,YANG Yintang,ZHU Zhangming,ZHANG Baojun. Ultra-low Voltage CMOS Bandgap Voltage Reference Based on Bulk-driven Technique[J]. Research & Progress of Solid State Electronics, 2006, 26(4): 531-535 |
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| Authors: | ZHANG Haijun YANG Yintang ZHU Zhangming ZHANG Baojun |
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| Abstract: | Based on bulk-driven and resistive subdivision techniques, an ultra-low voltage CMOS bandgap reference using second-order temperature and current feedback techniques is realized. The bulk-driven op amp is applied as the negative feedback of the reference. Its output is used to bias its current sources, leading to a higher power supply rejection ratio (PSRR), that is -63.8 dB. The bandgap reference is simulated by Hspice simulator. Under a 0.9 V supply, the output voltage of the reference is 572.45 mV, and its temperature coefficient is 13.3 ppm/°C. The variation of the output with supply voltage range of 0.8～1.4 V is 3.5 mV. Based on TSMC 0.25 μm 2P5M CMOS process, the die area of the proposed bulk-driven bandgap voltage is 203 μm×478.1 μm. |
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| Keywords: | bulk-driven ultra-low voltage CMOS bandgap reference temperaure coefficient PSRR |
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