| 双极模拟IC抗辐射加固措施探讨 |
| |
| 引用本文： | 苏万市.双极模拟IC抗辐射加固措施探讨[J].微电子学,1988(6). |
| |
| 作者姓名： | 苏万市 |
| |
| 作者单位： | 四川固体电路研究所 |
| |
| 摘 要： | 从中子和γ射线引起半导体器件退化的基本效应出发,分别分析了抗中子和γ射线辐射的加固措施,还给出了初步试验结果以及尚存在的困难和可能采取的措施。
|
| 关 键 词： | 双极集成电路 抗辐射加固 辐射效应 |
An Approach to Radiation Hardening of Bipolar Analog ICs |
| |
| Su Wanshi.An Approach to Radiation Hardening of Bipolar Analog ICs[J].Microelectronics,1988(6). |
| |
| Authors: | Su Wanshi |
| |
| Affiliation: | Sichuan Institute of Solid-state Circuits |
| |
| Abstract: | Some methods for neutron- and gamma-ray radiation hardening are analyzed with respect to the basic effect of neutron and gamma ray induced degradation in semiconductor devices. Also presented are results of preliminary tests and current difficulties as well as some possible solutions |
| |
| Keywords: | Bipolar IC Radiation hardening Radiation effect |
| 本文献已被 CNKI 等数据库收录！ |
