| 硅-蓝宝石压力传感器芯片调整电阻的设计 |
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| 引用本文： | 姚东媛,文彬,谢胜秋,邹向光. 硅-蓝宝石压力传感器芯片调整电阻的设计[J]. 传感器与微系统, 2004, 23(9): 40-41,44 |
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| 作者姓名： | 姚东媛 文彬 谢胜秋 邹向光 |
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| 作者单位： | 中国电子科技集团公司,第四十九研究所,黑龙江,哈尔滨,150001 |
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| 摘 要： | 介绍了硅-蓝宝石压力传感器芯片外延硅层上调整电阻的设计和应用,通过设计调整电阻来实现芯片的电桥平衡,达到了调整其输出特性、改善传感器性能、提高芯片适用性的目的。
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| 关 键 词： | 硅-蓝宝石 压力传感器芯片 调整电阻 |
| 文章编号： | 1000-9787(2004)09-0040-02 |
Design of adjusting resistance on silicon on sapphire pressure sensor chip |
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| YAO Dong-yuan,WEN Bin,XIE Sheng-qiu,ZOU Xiang-guang. Design of adjusting resistance on silicon on sapphire pressure sensor chip[J]. Transducer and Microsystem Technology, 2004, 23(9): 40-41,44 |
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| Authors: | YAO Dong-yuan WEN Bin XIE Sheng-qiu ZOU Xiang-guang |
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| Abstract: | Design and application of adjusting resistance on epitaxial silicon layer of silicon on sapphire pressure sensor chip is presented.The bridge balance of the chip is achieved by the adjusting resistance in design.Output character can be adjusted, sensor capability is improved,applicability of the chip is enhanced. |
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| Keywords: | silicon on sapphire pressure sensor chip adjusting resistance |
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