| 生长停顿改善MOCVD生长InGaN/GaN多量子阱的特性 |
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| 引用本文： | 牛南辉,王怀兵,刘建平,刘乃鑫,邢燕辉,韩军,邓军,沈光地.生长停顿改善MOCVD生长InGaN/GaN多量子阱的特性[J].光电子．激光,2007,18(4):422-424. |
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| 作者姓名： | 牛南辉 王怀兵 刘建平 刘乃鑫 邢燕辉 韩军 邓军 沈光地 |
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| 作者单位： | 北京工业大学电控学院光电子技术实验室,北京,100022 |
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| 基金项目： | 国家自然科学基金
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北京市教委科研项目
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北京市属市管高等学校人才强教计划 |
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| 摘 要： | 利用金属有机物化学气相淀积(MOCVD)生长了InGaN/GaN多量子阱(MQWs)结构,研究了生长停顿对InGaN/GaN MQWs特性的影响.结果表明,采用生长停顿,可以改善MQWs界面质量,提高MQWs的光致发光(PL)与电致发光(EL)强度;但生长停顿的时间过长,阱的厚度会变薄,界面质量变差,不仅In组分变低,富In的发光中心减少,而且会引入杂质,致使EL强度下降.
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| 关 键 词： | InGaN/GaN多量子阱(MQW) 光致发光(PL) 电致发光(EL) X射线双晶衍射(DCXRD) 金属有机物化学气相淀积(MOCVD) |
| 文章编号： | 1005-0086（2007）04-0422-03 |
| 修稿时间： | 2006-06-23 |
Effects of Growth Interruption on the Properties of InGaN/GaN MQWs Grown by MOCVD |
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| NIU Nan-hui,WANG Huai-bing,LIU Jian-ping,LIU Nai-xin,XING Yan-hui,HAN Jun,DENG Jun,SHEN Guang-di.Effects of Growth Interruption on the Properties of InGaN/GaN MQWs Grown by MOCVD[J].Journal of Optoelectronics·laser,2007,18(4):422-424. |
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| Authors: | NIU Nan-hui WANG Huai-bing LIU Jian-ping LIU Nai-xin XING Yan-hui HAN Jun DENG Jun SHEN Guang-di |
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| Affiliation: | Institute of Information,Beijing University of Technology and Beijing Optoelectronic Technology Laboratory,Bei jing 100022 ,China |
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| Abstract: | InGaN/GaN MQWs structures were grown by MOCVD.The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated.The growth interruption can improve the interface quality,increase the intensity of photoluminescence(PL) and electroluminescence(EL);but if the interruption time was too long,the well thickness and the average in composition of MQWs decreased,and the EL intensity also decreased due to poor interface quality and impurity derived by growth interruption. |
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| Keywords: | InGaN/GaN MQW photoluminescence(PL) electroluminescence(EL) DCXRD MOCVD |
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