Studies of MOCVD for high Tc thin films

In this article we report on results obtained from studies of the effect of total pressure and carrier gas flow rate on the rate of precursor evaporation for typical precursors used in the MOCVD of high temperature superconductors (HTS). We find that this process is under significant mass transfer control and we consider the implications of this for growth of HTS. In particular, we discuss the problems associated with the use of solid precursors and possible strategies for solving the difficulties.