A New Model for Inverse Hall-Petch Relation of Nanocrystalline Materials |
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| Authors: | Ali Shafiei Mohammadabadi Kamran Dehghani |
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| Affiliation: | (1) Department of Material Science and Engineering, Sharif University of Technology, Tehran, Iran;(2) Department of Mining and Metallurgical Engineering, AmirKabir University of Technology, Tehran, Iran |
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| Abstract: | In the present article, a new model for inverse Hall-Petch relation in nanocrystalline materials has been proposed. It is
assumed that lattice distortion along grain boundaries can cause internal stresses and high internal stresses along grain
boundaries can promote the grain boundary yielding. The designed model was then verified using the nanocrystalline-copper
data. The minimum grain size for inverse Hall-Petch relation is determined to be about 11 nm for Cu. |
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| Keywords: | Hall-Petch equation internal stress nanocrystalline materials yield strength |
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