| 用于电路模拟的4H-SiC MOSFET高温沟道电子迁移率模型 |
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| 引用本文： | 戴振清,杨瑞霞,杨克武. 用于电路模拟的4H-SiC MOSFET高温沟道电子迁移率模型[J]. 半导体学报, 2007, 28(8): 1252-1255 |
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| 作者姓名： | 戴振清 杨瑞霞 杨克武 |
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| 作者单位： | 河北工业大学，天津 300130;河北科技师范学院，秦皇岛 066600;河北工业大学，天津 300130;河北工业大学，天津 300130;中国电子科技集团第十三研究所，石家庄 050051 |
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| 摘 要： | 提出了适用于电路模拟的4H-SiC n-MOSFET高温沟道电子迁移率模型.在新模型中,引入了横向有效电场和表面粗糙散射的温度依赖性,电子饱和漂移速度与横向有效电场和温度的关系,以及改进的界面陷阱电荷和固定氧化物电荷库仑散射模型等因素.采用与温度-阈值电压实验曲线拟合的方法,确定了界面态参数和固定氧化物电荷.基于新迁移率模型的模拟结果与实验吻合.
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| 关 键 词： | 4H-SiC n-MOSFET 阈值电压 界面态参数 高温迁移率 |
| 文章编号： | 0253-4177（2007）08-1252-04 |
| 收稿时间： | 2007-01-19 |
| 修稿时间： | 2007-01-19 |
Temperature-Dependent 4H-SiC MOSFET Channel-Electron Mobility Model for Circuit Simulation |
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| Dai Zhenqing,Yang Ruixia and Yang Kewu. Temperature-Dependent 4H-SiC MOSFET Channel-Electron Mobility Model for Circuit Simulation[J]. Chinese Journal of Semiconductors, 2007, 28(8): 1252-1255 |
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| Authors: | Dai Zhenqing Yang Ruixia Yang Kewu |
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| Affiliation: | Hebei University of Technology,Tianjin 300130,China;Hebei Normal University of Science and Technology,Qinhuangdao 066600,China;Hebei University of Technology,Tianjin 300130,China;Hebei University of Technology,Tianjin 300130,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China |
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| Abstract: | An improved temperature-dependent 4H-SiC MOSFET channel-electron mobility model for circuit simulation is established.Some factors are introduced,including the effects of temperature on transverse effective electric field and surface roughness scattering,the dependence of the saturation drift velocity of the electron on transverse effective electric field and temperature,and an improved interface trapped charge and fixed oxide charge coulomb scattering model.In addition,the interface state parameters and fixed oxide charge density are extracted by simulation with the experimental temperature-threshold voltage curve.The simulated output characteristic curves with this model agree with experimental results. |
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| Keywords: | 4H-SiC n-MOSFET threshold voltage interface state parameters temperature-dependent mobility |
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