| 低温非晶硅/金圆片键合技术(英文) |
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| 引用本文： | 刘米丰,徐德辉,熊斌,王跃林. 低温非晶硅/金圆片键合技术(英文)[J]. 纳米技术与精密工程, 2013, 0(4): 375-378 |
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| 作者姓名： | 刘米丰 徐德辉 熊斌 王跃林 |
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| 作者单位： | [1]中国科学院上海微系统与信息技术研究所,传感技术国家重点实验室,上海200050 [2]中国科学院研究生院,北京100049 |
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| 基金项目： | 国家高技术研究发展计划（863计划）资助项目（2012AA040402）;国家重点基础研究发展计划（973计划）资助项目（2011CB309501）;国家科技重大专项资助项目（2011ZX02507-03）. |
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| 摘 要： | 本文研究了低温非晶硅/金圆片键合技术.具有不同金硅比的键合片在400℃键合温度和1 MPa键合压力下维持30 min,其键合成功区域均高于94%,平均剪切强度均大于10.1 MPa.键合强度测试结果表明键合成品率与金硅比大小无关,平均剪切强度在10～20 MPa范围内.微观结构分析表明键合后单晶硅颗粒随机分布在键合层内,而金则充满其他区域,形成了一个无空洞的键合层.无空洞键合层确保不同金硅比非晶硅/金键合片均具有较高的键合强度,可实现非晶硅/金键合技术在圆片键合领域的应用.
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| 关 键 词： | 圆片键合 非晶硅/金 微结构分析 键合质量 |
Low-Temperature Amorphous Si/Au Wafer Bonding. |
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| Liu Mifeng,Xu Dehui,Xiong Bin,Wang Yuelin. Low-Temperature Amorphous Si/Au Wafer Bonding.[J]. Nanotechnology and Precision Engineering, 2013, 0(4): 375-378 |
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| Authors: | Liu Mifeng Xu Dehui Xiong Bin Wang Yuelin |
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| Affiliation: | 1State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China) |
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| Abstract: | The low-temperature amorphous Si/Au wafer bonding with different Au/Si volumetric ratios was investigated in this paper. The bond yield of above 94% and the average shear strength of above 10. 1 MPa have been achieved by the bonding method at 400 ℃ under 1 MPa pressure for 30 rain in vac- uum. The results of bonding quality test show that the bonding yield is independent of Au/Si ratio, and the average shear strength is 10--20 MPa. The microstructure analysis show that the Si grains are distrib- uted randomly in the bonded layer and Au fills the other regions of the bonded layer, which results in a void-free bonded layer. The void-free bonded layer improves the bonding quality of amorphous Si/Au bonding with different Au/Si ratios, and ensures its application to wafer bonding. |
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| Keywords: | wafer bonding amorphous Si/Au microstructure analysis bonding quality |
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