| MOCVD Ga_xIn_(1-x)As_(1-y)Sb_y Alloys and the Infrared Detector |
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| 作者姓名： | 周天明 张宝林 金亿鑫 蒋红 宁永强 |
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| 作者单位： | Changchun Institute of Physics Chinese Academy of Sciences，Changchun 130021，China，Changchun Institute of Physics，Chinese Academy of Sciences，Changchun 130021，China，Changchun Institute of Physics，Chinese Academy of Sciences，Changchun 130021，China，Changchun Institute of Physics，Chinese Academy of Sciences，Changchun 130021，China，Changchun Institute of Physics，Chinese Academy of Sciences，Changchun 130021，China |
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| 摘 要： | Ga_xIn_(1-x)As_(1-y)Sb_y alloys have been grown by atmospheric pressure MOCVD on n-GaSb(Te-doped)substrate.The sohd composition was determined by using electron microprobe.The alloys of GalnAsSb withcomposition in miscibility gap were successfully grown.The optical properties of Ga_xIn_(1-x)As_(1-y)Sb_y laverswere characterized by the photoluminescence and the infrared absorption.The spectral responses ofp~+-GaInAsSb/p-Ga_xIn_(1-x)As_(1-y)Sb_y/n-GaSb detectors showed wavelength cut off at 2.4μm and detectivity-D~*=5×10~8 cmHz~(1/2)/W at room temperature.
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MOCVD Ga_xIn_(1-x)As_(1-y)Sb_y Alloys and the Infrared Detector |
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| Zhou Tianming Zhang Baolin Jin Yixin Jiang Hong Ning Yongqiang Changchun Institute of Physics Chinese Academy of Sciences,Changchun ,China.MOCVD Ga_xIn_(1-x)As_(1-y)Sb_y Alloys and the Infrared Detector[J].Rare Metals,1992(3). |
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| Authors: | Zhou Tianming Zhang Baolin Jin Yixin Jiang Hong Ning Yongqiang Changchun Institute of Physics Chinese Academy of Sciences Changchun China |
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| Affiliation: | Zhou Tianming Zhang Baolin Jin Yixin Jiang Hong Ning Yongqiang Changchun Institute of Physics Chinese Academy of Sciences,Changchun 130021,China |
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| Abstract: | |
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| Keywords: | MOCVD Ga_xIn+(1-x)As_(1-y)Sb_y Photoluminescence Infrared absorption Infrared detector |
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