Chemical compositions and optical properties of HfOxNy thin films at different substrate temperatures |
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| Authors: | M. Liu Q. Fang G. He L.Q. Zhu S.S. Pan L.D. Zhang |
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| Affiliation: | aKey Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, PR China;bElectronic and electrical Engineering, University College London, Torrington Place, London WCIE 7JE, UK |
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| Abstract: | High-k HfOxNy thin films have been grown by radio frequency (rf) reactive sputtering of metal Hf target in N2/Ar/O2 ambient at different substrate temperatures. The chemical compositions of the films have been investigated as a function of substrate temperature by X-ray photoelectron spectroscopy (XPS). XPS measurements showed that nitrogen concentration increases with an increase in substrate temperature. Room-temperature spectroscopic ellipsometry (SE) with photon energy 0.75–6.5 eV was used to investigate the optical properties of the films. SE results demonstrated that refractive index n increases with an increase in substrate temperature. Based on TL parameters which were obtained from the best fit results used in a simulation of the measured spectra, meanwhile, we conclude that the energy band gap (Eg) decreases with an increase in substrate temperature. |
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| Keywords: | High-k Optical properties Band gap HfOxNy thin films |
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