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| 氮化镓异质结高能电子辐照的电子背散射衍射研究 | |
| 引用本文： | 马通达,左玉婷,张智慧,付雪涛,张崇宏,张丽卿,王新强.氮化镓异质结高能电子辐照的电子背散射衍射研究[J].电子显微学报,2011,30(4):369-371. |
| 作者姓名： | 马通达 左玉婷 张智慧 付雪涛 张崇宏 张丽卿 王新强 |
| 作者单位： | 1. 北京有色金属研究总院,北京,100088 2. 中国科学院近代物理研究所,甘肃兰州,730000 3. 北京大学,北京,100871 |
| 基金项目： | 国家自然科学基金资助项目（No.50872013,No.10575124,No.10979063） |
| 摘 要： | 利用2MeV电子辐照氮化镓(GaN)异质结,辐照剂量分别为1×1015/cm2和5×1015/cm2.电子背散射衍射(EBSD)菊池图的图像质量IQ值随辐照剂量的增加而增大,对应的表层应变或畸变减小.扫描电镜能谱(SEM/EDS)分析发现氧原子在外延层心部发生富集,表明高能电子辐照在GaN外延层内引入晶格损伤.表层应变... |
| 关 键 词： | 氮化镓异质结 高能电子辐照 EBSD |
Investigation on high-energy electron irradiation on GaN heterostructure by EBSD |
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| MA Tong-da,ZUO Yu-ting,ZHANG Zhi-hui,FU Xue-tao,ZHANG Chong-hong,ZHANG Li-qing,WANG Xin-qiang.Investigation on high-energy electron irradiation on GaN heterostructure by EBSD[J].Journal of Chinese Electron Microscopy Society,2011,30(4):369-371. | |
| Authors: | MA Tong-da ZUO Yu-ting ZHANG Zhi-hui FU Xue-tao ZHANG Chong-hong ZHANG Li-qing WANG Xin-qiang |
| Affiliation: | 1.General Research Institute for Nonferrous Metals,Beijng 100088;2.Institute of Modern Physics, Chinese Academy of Sciences,Lanzhou Gansu 730000;3.Peking University,Beijing 100871,China) |
| Abstract: | GaN heterostructures were irradiated by 2MeV electron beam.The fluencies reached 1×1015/cm2 and 5×1015/cm2,respectively.IQ values of EBSD kikuchi patterns increased with the increasing of electron irradiation.The corresponding strain or distortion of the surface decreased.SEM/EDS analysis showed that oxygen atoms enriched within the epilayers,which was attributed to the attraction from the damaged lattice by electron irradiation.It was assumed that the evolution of strain status was related to impurity diffusion and introduction of point defects,among of which lattice damage played the major role in the whole process. |
| Keywords: | GaN heterostructure high-energy electron irradiation EBSD |
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