| MOS场效应管压力微传感器 |
| |
| 引用本文： | 颜黄苹,冯勇建,许金海,卞剑涛.MOS场效应管压力微传感器[J].传感器与微系统,2001,20(5):19-21. |
| |
| 作者姓名： | 颜黄苹 冯勇建 许金海 卞剑涛 |
| |
| 作者单位： | 厦门大学机电工程系, |
| |
| 摘 要： | 阐述了一种MOS场效应管 (MOSFET)压力微传感器的结构和基本工作原理。通过对该传感器的仿真实验 ,证明了MOSFET压力微传感器可通过简单的电压———电流转换原理 ,利用栅极电容的变化导致漏极电流与开启电压的变化而有效地测出作用于栅极膜片的压力的变化 ,具有较高的灵敏度与稳定性。
|
| 关 键 词： | 微传感器 MOS场效应管 压力测量 |
| 文章编号： | 1000-9787(2001)05-0019-03 |
| 修稿时间： | 2001年1月20日 |
MOS field effect transistor pressure microsensor |
| |
| YAN Huang-ping,FENG Yong-jian,XU Jin-hai,BIAN Jian-tao.MOS field effect transistor pressure microsensor[J].Transducer and Microsystem Technology,2001,20(5):19-21. |
| |
| Authors: | YAN Huang-ping FENG Yong-jian XU Jin-hai BIAN Jian-tao |
| |
| Abstract: | The structure and basic working principle of a type of MOS field effect transistor pressure microsensor are presented. On the basis of simulation experiment, it proves that this microsensor can make use of the change of gate capacitance which leads to the change of drain current and threshold voltage to measure the change of pressure on the gate diaphragm effectively.This type of microsensor possesses higher sensitivity and higher stability. |
| |
| Keywords: | microsensor MOSFET pressure measurement |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
