Low-temperature (77 K) impurity breakdown in <Emphasis Type="Italic">p</Emphasis>-type 4<Emphasis Type="Italic">H</Emphasis>-SiC |
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Authors: | I V Grekhov P A Ivanov A S Potapov T P Samsonova |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Science, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | The impact ionization of acceptors in aluminum-doped 4H-SiC epitaxial films (Al concentration 2 × 1015 cm?3) at a temperature of 77 K is studied. It is found that the impact-ionization coefficient exponentially depends on the reverse electric field: α p = α*pexp(?F*/F). The largest ionization coefficient is α* p = 7.1 × 106 cm?3 s?1, and the threshold field is F* = 2.9 × 104 V/cm. |
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