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Fast photoconductive GaAs detectors made by laser stimulated MOCVD |
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| Authors: | Roth W. Schumacher H. Beneking H. |
| Affiliation: | Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany; |
| Abstract: | Photoconductive detectors with rise times less than 10 ps have been made from GaAs grown by laser-stimulated MOCVD. The growth temperature was 450°C, and laser pulse energy and pulse repetition frequency were 120 mJ and 10 Hz, respectively. |
| Keywords: | |