| 基于功率MOSFET导通压降的短路保护方法 |
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| 引用本文： | 王文兵. 基于功率MOSFET导通压降的短路保护方法[J]. 电力电子技术, 2009, 43(8) |
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| 作者姓名： | 王文兵 |
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| 作者单位： | 合肥工业大学,安徽,合肥,230088 |
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| 摘 要： | 介绍了一种基于检测功率MOSFET导通压降实现短路保护的方法.该方法利用功率MOSFET自身导通电阻产生的导通压降,来得到保护控制信号,实现对功率MOSFET的保护.经实验及工程应用验证,该方法具有保护动作速度快,电路结构简单、可靠的特点.
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| 关 键 词： | 场效应晶体管 短路保护/导通压降 |
A Short-circuit Protection Method based on Detection of Power MOSFET Turn-on Voltage Drop |
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| WANG Wen-bing. A Short-circuit Protection Method based on Detection of Power MOSFET Turn-on Voltage Drop[J]. Power Electronics, 2009, 43(8) |
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| Authors: | WANG Wen-bing |
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| Affiliation: | WANG Wen-bing (Hefei University of Technology,Hefei 230088,China) |
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| Abstract: | A short-circuit protection method based on detecting power MOSFET turn-on voltage is presented.In the method,the turn-on voltage drop induced by MOSFET inherent on-resistance is used to get the protection control signal, and thus to achieve the protection of power MOSFET.Experiments and engineering applications proved that the protection method has the advantages,such as fast protection action,simple and reliable circuits structure. |
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| Keywords: | field effect transistor short-circuit protection/turn-on voltage drop |
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