Band gap study on zinc-doped cadmium sulphide |
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Authors: | T K Anee Francis P Xavier K Balakrishnan |
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Affiliation: | (1) Physics Department, Loyola College, 600 034 Madras, India;(2) Crystal Growth Centre, Anna University, 600 025 Madras, India |
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Abstract: | Photoconductivity studies on cadium sulphide (CdS) crystals grown by chemical vapour transport method were carried out at
room temperature (300°C) over the spectral range between the near ultraviolet and the near infrared. Three samples of CdS
crystals, viz. undoped CdS crystal, 0·5 ppm zinc doped CdS crystal, and 1 ppm zinc doped CdS crystal, were used. The variation
of photocurrent as a function of applied field, intensity of the incident light, response time, and incident wavelength was
studied. It was observed that the band gap decreased linearly as doping concentration increased. This is interpreted as being
due to doped impurity atoms acting as traps very close to the conduction band edge. The rise and decay times also decreased
linearly as doping concentration increased. This has been interpreted due to more free charge carriers being created in the
crystal with increase in doping concentration, thereby making the crystal more photosensitive. |
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Keywords: | Band gap doping cadmium sulphide |
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