氮化温度对有机沉淀法制备GaN纳米粉体的影响

首次报道了以硝酸镓（Ga（NO3）3）为原料,采用有机沉淀法在碱性条件下制备出含Ga的前驱体,将该前驱体在950-1 050℃之间利用氨气（NH3）直接氮化合成了GaN纳米粉体,并利用X射线衍射（XRD）、扫描电镜（SEM）和光致发光（PL）技术对所制备的GaN纳米粉体分别进行了物相组成、显微形貌和发光性能分析.结果表明：有机沉淀法制备的含Ga前驱体粉体在不同氮化温度下均生成了高纯度六方纤锌矿型GaN纳米粉体,其粒径小于100 nm,且均匀分散;随着氮化温度的增高,GaN纳米粉体的颗粒度下降,结晶度增强;1 050℃氮化合成的GaN纳米粉体发光性能最优异.

EFFECTS OF AMMONIATING TEMPERATURE ON SYNTHESIS OF GALLIUM NITRIDE (GAN) NANOPOWDERS BY ORGANIC DEPOSITION METHOD

This first reports the gallium nitride（GaN） nanopowders synthesized by ammoniating Ga-implanted precursors at different temperature between 950~1 050 ℃,the Ga-implanted precursors were prepared by gallium nitrate（Ga（NO3）3） through organic deposition method in an alkaline medium.The phase constitution,micrograph morphology and luminescent properties of as-synthesized GaN nanopowders were characterized by X-ray diffraction（XRD）,scanning electron microscopy（SEM） and photoluminescence（PL）.Results show that GaN nanopowders fabricated by ammoniating Ga-implanted precursors producted by organic deposition method at different temperature are all hexagonal wurtzite structures,with size bellow 100 nm,and have quite well uniformity and dispersion.And the GaN nanopowders become smaller and more crystallization with the ammoniating temperature increased.The GaN nanopowders manufactured at 1 050 ℃ have the best luminescent property.